Thinfilm’s technology is based on using a ferroelectric polymer as the functional memory material sandwiched between two sets of electrodes in a passive matrix – each crossing of metal lines defines a memory cell.

The memory function is based on an intrinsic mechanism related to orientation of the polymer chains. The polymer chains can be oriented in two different ways representing “0” and “1”. Each state is stable without application of an external field which means that information in the memory will not be lost when the power is turned off.  This is referred to as a non-volatile memory. The intrinsic character of the polymer means that the technology is extremely scalable. Thinfilm has demonstrated 110 nm cells and shown that no lower limits could be found. An additional important characteristic of the technology is that it is based on non-toxic materials. This is very important in realizing our Memory Everywhere^TM vision

The Thinfilm-patented passive matrix is the “Holy grail” of memory architectures that dispenses with the need of active circuitry within the memory cell. This enables ultimate packing for high density memories as well as the possibility to stack memory layers on top of each other. The passive array memory architecture allows the memory portion to be separate from the read/write electronics enabling stand alone application without integration with printed logic.

The core of Thinfilms know-how and patent portfolio relates to processing and design of memories and pulse protocols for practical application of  passive matrix architectures.  The main challenge in a passive matrix is related to reading and writing data of any given cell without destroying/disturbing data stored in neighboring cells.

Some memory relevant technical features are: